t4 - lds -0 324 , rev . 1 (12/11 /13 ) ?201 3 microsemi corporation page 1 of 4 one enterprise, aliso viejo, ca 92656 ph: 949 - 380 - 6100 sales.support@microsemi.com 2n 1 016b, 2n1016c, 2n1016d available on commercial versions npn s ilicon high -p ower t ransistor qualified per mil -prf- 19500/ 1 02 qualified levels : jan description this family of high - frequency, epitaxial planar transistors feature low saturation voltage. to -82 package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 1 016 number ? jan qualific ation is available per mil - prf - 19500/ 1 02 ? rohs compliant versions available (commercial grade only) applications / benefits ? general purpose transistors for high power applications requiring high frequency sw itching and low package profile ? military and o the r high - reliability applications m axim um ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.micr osemi.com parameters / test conditions symbol value unit operating & storage junction temperature range t j , t stg - 65 to + 15 0 c collector - emitter voltage 2n1016 b 2n1016 c 2n1016 d v ceo 100 150 200 v collector - base voltage 2n1016 b 2n1016 c 2n1016 d v cbo 100 150 200 v emitter - base voltage v ebo 25 v collector current i c 7.5 a collector power dissipation @ t c = + 4 5 c (1) p c 150 w notes : 1. derate linearly 1.428 w/c for t c > + 45 c downloaded from: http:///
t4 - lds -0 324 , rev . 1 (12/11 /13 ) ?201 3 microsemi corporation page 2 of 4 one enterprise, aliso viejo, ca 92656 ph: 949 - 380 - 6100 sales.support@microsemi.com 2n 1 016b, 2n1016c, 2n1016d mechanical and packaging ? case: hermetically sealed, k ovar bas e, n ickel cap ? t erminals : alloy 52 with nickel plating and h ot s older d ip ( sn63/pb37 ) or matte - tin plating for rohs compliance (available on commercial grade only). ? marking: part number, d ate c ode, m anufacturers id ? weight: approximately 24.28 grams ? pola rity: see p ackage d imensions on last page. part nomenclature jan 2n 1 016 b (e3) reliability level jan = jan level blank = commercial jedec type number (see electrical c haracteristic s table) rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant voltage rating b = 100 v c = 150 v d = 200 v symbols & definitions symbol definition h fe common - emitter static forward current transfer ratio: the ratio of the dc output current to the dc input c urrent with the output voltage held constant. i b base current: the value of the dc current in to the base terminal. i c collector current: the value of the dc current in to the col lector terminal. i cbo collector cutoff current, emitter open: the current into the collector terminal when it i s biased in the reverse direction with respect to the base terminal and the emitter terminal is open - circuited. i cex collector cutoff curren t, circuit between base and emitter: the current into the collector terminal when it is biased in the reverse direction with respect to the emitter terminal, and the base terminal is returned to t he emitter terminal through a specified circuit. the collector terminal is considered to be biased in the reverse direction when it is made positive for npn transistors, or negative for pnp transistors, with respect to the emitter terminal. i ebo emitter cutoff current, collector open: the current into the emitter terminal when it i s biased in the reverse direction with respect to the base terminal and the collector terminal is open - circuited. v (br)ceo collector - emitter breakdown voltage, base open. the breakdown voltage between the collector and emitter term inals when the collector terminal is biased in the reverse direction with respect to the emitt er terminal, and the base terminal is open circuited. the collector terminal is considered to be biased in the reverse direction when i t is made positive for npn transistors, or negative for pnp transistors, with respect to the emitter terminal. v be (sat) base - emitter saturation voltage: the voltage between the base and emitte r terminals for specified base current and collector current conditions that are intended to ensure that the collector junction is forward bi ased. v cb collector - base voltage: the dc voltage between the collector and the base. v cb o collector - base voltage, emitter open : the voltage between the collector and base terminals when the emitter terminal is open - circuited . v ce collector - emitter voltage: the dc voltage between the collector and the emitter. v ce (sat) collector - emitter saturation voltage: the voltage between the collector and emitter terminals under conditions of base current or base - emitter voltage beyond which the collector current remains essentially constant as the base c urrent or voltage is increased. v ceo collector - emitter voltage, base open : the voltage between the collector and the emitte r terminals when the base ter minal is open - circuited. v eb emitter - base voltage: the dc voltage between the emitter and the base v ebo emitter - base voltage, collector open : the voltage between the emitter and base terminals with the collector terminal open - circuited. downloaded from: http:///
t4 - lds -0 324 , rev . 1 (12/11 /13 ) ?201 3 microsemi corporation page 3 of 4 one enterprise, aliso viejo, ca 92656 ph: 949 - 380 - 6100 sales.support@microsemi.com 2n 1 016b, 2n1016c, 2n1016d electrical c haracteristics off character is tics parameters / test conditions symbol min. max. unit collector - emitter breakdown voltage v (br)ceo v i c = 200 ma 2n 1 016 b 2n 1016 c 2n 1 016 d 100 150 200 collector - emitter cutoff current i cex 1.0 ma v eb = 1.5 v, v ce = 100 v v eb = 1.5 v, v ce = 150 v v eb = 1.5 v, v ce = 200 v 2n1016b 2n1016c 2n1016d collector - base cutoff current v cb = 100 v v cb = 150 v v cb = 200 v 2n1016b 2n1016c 2n1016d i cbo 1.0 ma emitter - base cutoff current v eb = 25 .0 v i ebo 1.0 ma on characteristics (1) parameters / test conditions symbol min. max. unit forward - current transfer ratio h fe i c = 2 a, v ce = 4.0 v i c = 5 a, v ce = 4.0 v i c = 7.5 a, v ce = 4.0 v 2n1016b 2n1016c 2n1016d 20 10 6 80 35 20 collector - emitter sat uration voltage v ce(sat) 2.5 v i c = 5 a, i b = 1 a base - emitter saturation voltage i c = 5 a, i b = 1 a v be(sat) 4 .0 v switching characteristics parameters / test conditions (for all symbols) symbol min. max. unit pulse response i c = 5 a , v eb = 6 v , v ce = 12 v i b1 and i b2 = 1.5 a t d + t r 10 s i c = 5 a , v eb = 6 v , v ce = 12 v i b1 and i b2 = 1.5 a t s + t f 15 s notes: (1 ) pulse test: p ulse w idth = 300 s, d uty c ycle 2.0% downloaded from: http:///
t4 - lds -0 324 , rev . 1 (12/11 /13 ) ?201 3 microsemi corporation page 4 of 4 one enterprise, aliso viejo, ca 92656 ph: 949 - 380 - 6100 sales.support@microsemi.com 2n 1 016b, 2n1016c, 2n1016d package dimensions 1. dimensio ns are i n i nc hes. 2. millimeters are given fo r information only. 3. see nbs handbook h28. 5/16 - 24 unf - 2a 4. two leads 5. reference point for temperature measurement dimensions symbol inch millimeters note min max min max a 1.24 1.28 31.5 32.51 b - 1.130 - 28.70 c 0.50 0.56 12.70 14.22 d 0.55 0.58 13.97 14.73 e 0.045 0.055 1.14 1.40 4 f 0.73 0.80 18.54 20.32 g 0.07 0.14 1.78 3.56 h 0.13 0.19 3.30 4.83 j 0.014 0.024 0.36 0.61 k 0.14 0.17 3.56 4.32 l 0.10 0.14 2.54 3.56 m 0.48 0.52 12.19 13.21 n 0.35 0.40 8.89 10.16 p 0.09 0.11 2.29 2.79 4 r 0.050 0.060 1.27 1.52 s 0.81 0.85 20.57 21.59 t - - - - 3 u 0.14 0.17 3.56 4.32 downloaded from: http:///
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